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Fairview Microwave

GaN Input Protected Low Noise Amplifiers

GaN Input Protected Low Noise Amplifiers
  • GaN Semiconductor Technology
  • Broadband Frequencies ranging from 1 - 23 GHz
  • High RF input power handling up to 10 watts CW
  • High gain up to 44 dB typ
  • Low Noise Figure as low as 1.5 dB typ
  • Rugged Mil-Grade SMA Connectorized Packaging

Model No.

Freqeuncy
Range

(GHz)

Maximum
Input Power
(CW) (dBm)

Small Signal Gain (dB) (Typ)

Noise
Figure (dB)
(Typ)

Output
P1dB (dBm)
(Typ)

Saturated
Output Power
(Psat) (Typ)

Output
IP3 (dBm)
(Typ)

DC Power
(V/mA)
(Typ)

Connectors

Product

Image

GaN Input Protected Low Noise Amplifiers from Fairview Microwave

The new series of Gallium Nitride (GaN) input protected Low Noise Amplifiers from Fairview Microwave (also known as LNA) is featured in our extensive in-stock RF amplifier selection.  Our connectorized GaN low noise amplifiers use SMA connectors at 50 Ohm.  The SMA GaN input protected amplifier has a minimum frequency of 1 GHz and a maximum frequency of 23 GHz.  The significantly low noise figure of this radio frequency amplifier is as low as 1.5 dB with a typical gain of up to 44 dB. LNA amplifiers are rated at 28 Volts DC maximum

GaN input protected LNA amplifiers are rated at 28 Volts DC maximum and 300 mA. Our GaN input protected low noise radio frequency LNA amplifiers are part of over 40,000 RF, microwave and millimeter wave components available from Fairview Microwave. This coaxial millimeter wave GaN input protected low noise amplifiers can ship worldwide the same day of the purchase as with our other available RF parts.

 

Model No.

Freqeuncy
Range

(GHz)

Maximum
Input Power
(CW) (dBm)

Small Signal Gain (dB) (Typ)

Noise
Figure (dB)
(Typ)

Output
P1dB (dBm)
(Typ)

Saturated
Output Power
(Psat) (Typ)

Output
IP3 (dBm)
(Typ)

DC Power
(V/mA)
(Typ)

Connectors

Product
Image

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